inchange semiconductor isc product specification isc silicon npn power transistor BUV42A description low collector saturation voltage- : v ce( sat ) = 0.9v(max.) @i c = 4a high switching speed applications designed for high current, high speed, high power applications. absolute maximum ratings(ta=25 ) symbol parameter value unit v cev collector-emitter voltage v be =-1.5v 400 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 12 a i cm collector current-peak 18 a i b b base current-continuous 2.5 a i bm base current- peak 4 a p c collector power dissipation @t c =25 120 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.46 /w isc website www.iscsemi.cn www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUV42A electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 0.2a; i b = 0; l= 25mh 300 v v (br)ebo emitter-base breakdown voltage i e = 50ma; i c = 0 7 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 0.4a b 0.9 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 0.4a b 1.3 v i cer collector cutoff current v ce = 400v;r be = 10 v ce = 400v;r be = 10 ;t c =100 0.5 2.5 ma i cev collector cutoff current v ce = 400v;v be = -1.5v v ce = 400v;v be = -1.5v;t c =100 0.5 2.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma isc website www.iscsemi.cn www.iscsemi.cn
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